The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determination
Space-charge photomodulation in metal/insulator/amorphous semiconductor structures
G Fortunato;L Mariucci;
1989
Abstract
The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determinationFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
