Field effect conductance and mobility have been calculated in superlattice thin film transistors by using a classical model. The results show that, for low interface state densities, both computed quantities increase as the number of period is increased, keeping constant the total semiconductor thickness. This model fits well the data already reported for such devices
Theory for field-effect mobility enhancement in multilayer structure thin-film transistors
L Mariucci;G Fortunato
1989
Abstract
Field effect conductance and mobility have been calculated in superlattice thin film transistors by using a classical model. The results show that, for low interface state densities, both computed quantities increase as the number of period is increased, keeping constant the total semiconductor thickness. This model fits well the data already reported for such devicesFile in questo prodotto:
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