In the present paper are shown the characteristics of devices succesfully employing low temperature plasma deposited a-SiO2 as gate insulator with thickness of 40 and 18 nm. They show a very sharp field effect conductivity onset and an on/off current ratio of about 8 orders of magnitude. Due to the very low insulator thickness it is possible to operate these devices in the range between -2 and 5V with on current of the order of 10-5A.
Low voltage operation a-Si:H thin film transistors with very thin PECVD a-SiO2 gate dielectric
G Fortunato;L Mariucci;
1989
Abstract
In the present paper are shown the characteristics of devices succesfully employing low temperature plasma deposited a-SiO2 as gate insulator with thickness of 40 and 18 nm. They show a very sharp field effect conductivity onset and an on/off current ratio of about 8 orders of magnitude. Due to the very low insulator thickness it is possible to operate these devices in the range between -2 and 5V with on current of the order of 10-5A.File in questo prodotto:
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