We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493189]
Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
De Simoni G;Gibertini M;Polini M;Beltram F;Pellegrini V
2010
Abstract
We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493189]File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
