This review discusses the application of photoemission-based microscopy techniques to the compositional characterization of semiconductor quantum dots and rings. The experimental technique is discussed in detail. Using this technique, self-assembled III-V and Ge/Si quantum dots have been studied. These results will be discussed, both for randomly nucleated and site-controlled quantum dots. Furthermore, results obtained on In As/GaAs self-assembled quantum rings will be reviewed
Photoemission Microscopy Studies of Quantum Dots and Rings
Biasiol G;S Heun;L Sorba
2011
Abstract
This review discusses the application of photoemission-based microscopy techniques to the compositional characterization of semiconductor quantum dots and rings. The experimental technique is discussed in detail. Using this technique, self-assembled III-V and Ge/Si quantum dots have been studied. These results will be discussed, both for randomly nucleated and site-controlled quantum dots. Furthermore, results obtained on In As/GaAs self-assembled quantum rings will be reviewedFile in questo prodotto:
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