We investigate the temperature-induced phase transition on Si-terminated beta-silicon carbide (SiC)(100) surface using scanning tunneling microscopy (STM) and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation, Above 700 K, the 2 x 1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional (1D) metallicity related to the Si-Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model.
1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface
Cricenti A;Crotti C;Ferrari L;
2000
Abstract
We investigate the temperature-induced phase transition on Si-terminated beta-silicon carbide (SiC)(100) surface using scanning tunneling microscopy (STM) and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation, Above 700 K, the 2 x 1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional (1D) metallicity related to the Si-Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model.File in questo prodotto:
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