We investigate the photoresponse of field-effect transistors based on conjugated polymer electrospun fibers. The electrical performances of single fiber transistors are controlled by modulating the channel conductivity under white light illumination. We demonstrate a photoresponsivity up to 100 mA/W for a 500-nm channel width fiber phototransistor illuminated by an intensity of 9.6 mW/cm(2). Studying the photoresponse switching cycles evidences that the photocurrent relaxation time can be reduced down to about 40 s by increasing the fiber surface-to-volume ratio
An electrospun fiber phototransistor by the conjugated polymer poly[2-methoxy-5-(2 '-ethylhexyloxy)-1,4-phenylene-vinylene]
D Pisignano
2011
Abstract
We investigate the photoresponse of field-effect transistors based on conjugated polymer electrospun fibers. The electrical performances of single fiber transistors are controlled by modulating the channel conductivity under white light illumination. We demonstrate a photoresponsivity up to 100 mA/W for a 500-nm channel width fiber phototransistor illuminated by an intensity of 9.6 mW/cm(2). Studying the photoresponse switching cycles evidences that the photocurrent relaxation time can be reduced down to about 40 s by increasing the fiber surface-to-volume ratioFile in questo prodotto:
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