We report on the growth of thick CdTe layers on ZnTe/(100)GaAs hybrid substrates by the novel H2 transport vapor phase epitaxy, (H2T-VPE) method. High crystalline quality (100)-oriented CdTe single crystal epilayers can be fabricated under atmospheric pressure and at growth temperatures (TD) in the 600-800°C interval. Double crystal X-ray diffraction measurements performed on epilayers thicker than 30 mum show CdTe (400) peaks with FWHM<59 arcsec. Samples grown under optimized conditions exhibit mirror-like surfaces. Nominally undoped epilayers grown <650°C are p-type and low resistive, but they turn n-type above 650°C, as a result of donor (likely Ga) diffusion from the substrate. RT resistivities (rho) around 10^5 Ohm.cm are obtained for 675°C
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors
P Prete;A Cola;
2000
Abstract
We report on the growth of thick CdTe layers on ZnTe/(100)GaAs hybrid substrates by the novel H2 transport vapor phase epitaxy, (H2T-VPE) method. High crystalline quality (100)-oriented CdTe single crystal epilayers can be fabricated under atmospheric pressure and at growth temperatures (TD) in the 600-800°C interval. Double crystal X-ray diffraction measurements performed on epilayers thicker than 30 mum show CdTe (400) peaks with FWHM<59 arcsec. Samples grown under optimized conditions exhibit mirror-like surfaces. Nominally undoped epilayers grown <650°C are p-type and low resistive, but they turn n-type above 650°C, as a result of donor (likely Ga) diffusion from the substrate. RT resistivities (rho) around 10^5 Ohm.cm are obtained for 675°CI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
