Synchrotron X-ray reflection topography was used to observe the onset of formation of the strain-relieving misfit dislocations in ZnSe epilayers grown by metalorganic chemical vapor deposition (MOCVD) on low dislocation density (100)GaAs substrates.
ASSESSMENT OF MOCVD-GROWN ZnSe EPILAYERS ON GaAs BY MEANS OF SYNCHROTRON RADIATION TOPOGRAPHY
P PRETE;
2001
Abstract
Synchrotron X-ray reflection topography was used to observe the onset of formation of the strain-relieving misfit dislocations in ZnSe epilayers grown by metalorganic chemical vapor deposition (MOCVD) on low dislocation density (100)GaAs substrates.File in questo prodotto:
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