Plasma deposition of a-Si,Ge:H,F films from SiF4-GeH4-H2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A two-phases model for the conduction mechanism is preliminarily discussed.
DEPOSITION OF SILICON-GERMANIUM ALLOYS UNDER PLASMA MODULATION CONDITIONS
1991
Abstract
Plasma deposition of a-Si,Ge:H,F films from SiF4-GeH4-H2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A two-phases model for the conduction mechanism is preliminarily discussed.File in questo prodotto:
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