Ce1xGdxO(4-x)/2 (CGO; x=0.1; 0.2) nanopowders have been synthesised by various preparation procedures. The materials have been uniaxially pressed and sintered at 1450 °C to obtain high-density ceramic pellets (qrelz96%). The microstructural properties were investigated by electron microscopy and X-ray diffraction. It has been observed that these properties influence bulk resistance, which represents a significant contribution to the overall device resistance in intermediate-temperature electrochemical devices. The degree of electronic conductivity in the materials is associated with the occurrence of Ce3+ ions generally caused by the exposure to very low oxygen partial pressures or reduced conditions. It has been found by electron paramagnetic resonance (EPR) analysis that electron conductivity occurs on the 10% doped CGO powder even under air exposure, whereas it does not vary with the preparation procedure.

Preparation and sintering of Ce1-xGdxO2-x/2 nanopowders and their electrochemical and EPR characterization

La Rosa D;Siracusano S;
2004

Abstract

Ce1xGdxO(4-x)/2 (CGO; x=0.1; 0.2) nanopowders have been synthesised by various preparation procedures. The materials have been uniaxially pressed and sintered at 1450 °C to obtain high-density ceramic pellets (qrelz96%). The microstructural properties were investigated by electron microscopy and X-ray diffraction. It has been observed that these properties influence bulk resistance, which represents a significant contribution to the overall device resistance in intermediate-temperature electrochemical devices. The degree of electronic conductivity in the materials is associated with the occurrence of Ce3+ ions generally caused by the exposure to very low oxygen partial pressures or reduced conditions. It has been found by electron paramagnetic resonance (EPR) analysis that electron conductivity occurs on the 10% doped CGO powder even under air exposure, whereas it does not vary with the preparation procedure.
2004
Istituto di Tecnologie Avanzate per l'Energia - ITAE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/76417
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