Thin silica-titania films containing inclusions of CdS semiconductor microcrystals have been produced by the sol-gel technique. A large blue shift (62 nm) of the absorption edge is observed and attributed to quantum confinement in the nanometer size microcrystals. High negative nonlinearity (n2 ? - 310-8 cm2/kW) has been found in these films. We report on measurements of the wavelength dependence of this nonlinearity. In particular a high negative nonlinear refractive index has been observed for pump photon energies located near the bandgap and between the bandgap and half the bandgap. The nonlinear refraction index shows a slow decrease in time attributed to oxidation of the semiconductor.

Nonlinear properties of semiconductor-doped silica sol-gel films

S Pelli;
1995

Abstract

Thin silica-titania films containing inclusions of CdS semiconductor microcrystals have been produced by the sol-gel technique. A large blue shift (62 nm) of the absorption edge is observed and attributed to quantum confinement in the nanometer size microcrystals. High negative nonlinearity (n2 ? - 310-8 cm2/kW) has been found in these films. We report on measurements of the wavelength dependence of this nonlinearity. In particular a high negative nonlinear refractive index has been observed for pump photon energies located near the bandgap and between the bandgap and half the bandgap. The nonlinear refraction index shows a slow decrease in time attributed to oxidation of the semiconductor.
1995
Istituto di Fisica Applicata - IFAC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/7729
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