A series of dialkylindium azolides of the type R 2In(NR?) (with R = Me and Et) have been synthesized by the reaction of InR 3 with various N-heterocycles (pyrrole, pyrazoles, imidazole and 1,2,4-triazole) or by treatment of R 2InCl with a lithiated azolide, Li(NR?) in an inert solvent. The compounds have been characterized by NMR ( 1H, 13C) and vibrational (IR and Raman) spectroscopy, and their mass spectra are discussed. The pyrazole derivatives are dimeric in solution and in the gas phase, whereas, as indicated by the mass spectral data, the triazole compound is trimeric in the gas phase, and the imidazole derivative seems to be polymeric. The spectroscopic data suggest that the dimethylindium-pyrrole compound has an unusual structure, which is not comparable with those of the other organoindium azolides. Dimethylindiumpyrazole was used in metalorganic vapor phase epitaxy (MOVPE) experiments to grow in InP layers.

Dialkylindium derivatives of unsaturated nitrogen heterocycles-preparation, spectroscopic properties and the use in MOVPE

Brianese N;Zanella P;
1991

Abstract

A series of dialkylindium azolides of the type R 2In(NR?) (with R = Me and Et) have been synthesized by the reaction of InR 3 with various N-heterocycles (pyrrole, pyrazoles, imidazole and 1,2,4-triazole) or by treatment of R 2InCl with a lithiated azolide, Li(NR?) in an inert solvent. The compounds have been characterized by NMR ( 1H, 13C) and vibrational (IR and Raman) spectroscopy, and their mass spectra are discussed. The pyrazole derivatives are dimeric in solution and in the gas phase, whereas, as indicated by the mass spectral data, the triazole compound is trimeric in the gas phase, and the imidazole derivative seems to be polymeric. The spectroscopic data suggest that the dimethylindium-pyrrole compound has an unusual structure, which is not comparable with those of the other organoindium azolides. Dimethylindiumpyrazole was used in metalorganic vapor phase epitaxy (MOVPE) experiments to grow in InP layers.
1991
CHEMICAL VAPOR-DEPOSITION
III-V SEMICONDUCTORS
INDIUM
GALLIUM
ALUMINUM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/7902
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