In this study Cathodoluminescence spectroscopy has been used for the first time irt order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results evidence a base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism can he responsible of that. Therefore Cathodoluminescence can he used as a non, destructive technique to study Berillium outdiffusion.
Cathodoluminescence investigation of stress induced berillium outdiffusionin AlGaAs/GaAs HBTs
G Salviati;L Lazzarini;
1997
Abstract
In this study Cathodoluminescence spectroscopy has been used for the first time irt order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results evidence a base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism can he responsible of that. Therefore Cathodoluminescence can he used as a non, destructive technique to study Berillium outdiffusion.File in questo prodotto:
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