We have studied the deep levels present in Er-doped silicon epilayers grown by the liquid-phase epitaxy method by deep level transient spectroscopy (DLTS) and optical DLTS, in order to identify the majority and minority carrier traps and a possible correlation between these traps and the observed photoluminescence (PL) and cathodoluminescence (CL) spectra. Capacitance-voltage analyses have been performed to analyze uniformity and depth distribution of the existing traps and marked differences have been observed between the luminescent and non-luminescent materials. The PL and depth resolved CL revealed the presence of dislocation-related emission lines which can possibly be correlated to the broadened peaks observed in DLTS analyses of luminescent material.
Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy
Lazzarini L;Salviati G
1998
Abstract
We have studied the deep levels present in Er-doped silicon epilayers grown by the liquid-phase epitaxy method by deep level transient spectroscopy (DLTS) and optical DLTS, in order to identify the majority and minority carrier traps and a possible correlation between these traps and the observed photoluminescence (PL) and cathodoluminescence (CL) spectra. Capacitance-voltage analyses have been performed to analyze uniformity and depth distribution of the existing traps and marked differences have been observed between the luminescent and non-luminescent materials. The PL and depth resolved CL revealed the presence of dislocation-related emission lines which can possibly be correlated to the broadened peaks observed in DLTS analyses of luminescent material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
