Epitaxy requires matching of the symmetry and lattice parameters of substrate and overgrowth and any mismatches in these imply the possibility of defects. Lattice parameter misfit results in coherency strain and a general approach has been developed to the solution of the elasticity problem for non-planar surfaces. This was applied to the self organization of nano-scale island nuclei and to the non-uniform strain field due to misfit dislocations and its effects on free-surface morphology and energy levels in multi-quantum well structures. The experimental results agree with the predictions of this theory. Substrate/epi-layer symmetry differences allow the formation of epitaxial domains including antiphase domains in epitaxial Alms of III-V compounds on (100) diamond-structure substrates. Studies of APBs in GaAs/Ge grown for space-satellite solar cells are reported.
Epitaxial matching and defects
L Lazzarini;M Mazzer;
1999
Abstract
Epitaxy requires matching of the symmetry and lattice parameters of substrate and overgrowth and any mismatches in these imply the possibility of defects. Lattice parameter misfit results in coherency strain and a general approach has been developed to the solution of the elasticity problem for non-planar surfaces. This was applied to the self organization of nano-scale island nuclei and to the non-uniform strain field due to misfit dislocations and its effects on free-surface morphology and energy levels in multi-quantum well structures. The experimental results agree with the predictions of this theory. Substrate/epi-layer symmetry differences allow the formation of epitaxial domains including antiphase domains in epitaxial Alms of III-V compounds on (100) diamond-structure substrates. Studies of APBs in GaAs/Ge grown for space-satellite solar cells are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
