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We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.

High resistivity in GaInP/GaAs by high temperature Fe ion implantation

F Priolo;M Longo
2005

Abstract

We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.
2005
Inglese
CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS
2005 International Conference on Indium Phosphide and Related Materials Book Series: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS
653
656
0-7803-8891-7
MAY 08-12, 2005
Glasgow, SCOTLAND
WOS:000232220700171
8
none
Cesca, T; Verna, A; Gasparotto, A; Fraboni, B; Tmpellizzeri, G; Priolo, F; Tarricone, L; Longo, M
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/8352
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