We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to tho optic;tl response of different QD families. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and discussed considering vertical coupling between dots: of the same column. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the same sample.
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE
P Frigeri;G Salviati;L Lazzarini
2000
Abstract
We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to tho optic;tl response of different QD families. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and discussed considering vertical coupling between dots: of the same column. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the same sample.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
