We report on the low pressure MOVPE growth and optical characterization pf ZnS, ZnSe and ZnS/ZnSe MQWs by using halide-free S and Se alkyl precursors. ZnS and ZnSe epilayers grown under optimized conditions show intense band-edge photoluminescence emissions and strong exciton absorption resonances. Accordingly, intrinsic excitonic emission is demonstrated for ZnS/ZnSe MQWs.
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells
P Prete;M Longo;
1996
Abstract
We report on the low pressure MOVPE growth and optical characterization pf ZnS, ZnSe and ZnS/ZnSe MQWs by using halide-free S and Se alkyl precursors. ZnS and ZnSe epilayers grown under optimized conditions show intense band-edge photoluminescence emissions and strong exciton absorption resonances. Accordingly, intrinsic excitonic emission is demonstrated for ZnS/ZnSe MQWs.File in questo prodotto:
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