The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
Temperature-dependent thermal characterization of Ge2Sb2Te5 and related interfaces by the photothermal radiometry technique
Claudia Wiemer;Massimo longo;
2010
Abstract
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
