Current-voltage characteristics of Mn1-xFexIn2Se4, at temperatures between 100-360K, have been determined under different conditions for the layered semimagnetic semiconductor system Mn1-xFexIn2Se4. The temperature dependence of the conductivity for the different samples presents two regions, which are characterized by different slopes. The activation energies of the electron trapping centers were determined by a linear fit for each region.
Mn1−xFexIn2Se4 SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES
Attolini G;
2009
Abstract
Current-voltage characteristics of Mn1-xFexIn2Se4, at temperatures between 100-360K, have been determined under different conditions for the layered semimagnetic semiconductor system Mn1-xFexIn2Se4. The temperature dependence of the conductivity for the different samples presents two regions, which are characterized by different slopes. The activation energies of the electron trapping centers were determined by a linear fit for each region.File in questo prodotto:
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