We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 degrees C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 degrees C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed.
Growth of InN on 6H-SiC by plasma Assisted Molecular Beam Epitaxy
M Losurdo;MM Giangregorio;G Bruno;
2006
Abstract
We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 degrees C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 degrees C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed.File in questo prodotto:
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