n this work we report on transmission electron microscopy and high-resolution x-ray diffractometry studies of lattice matched A&It+ -,As/I.nP and Ga$n, -,As/InP epilayers grown by molecular beam epitaxy on InP(100) substrates. High-resolution and diffraction contrast electron microscopy measurements show the presence of different contrast zones in the epilayers. The analysis of high-resolution x-ray diffraction measurements and computer simulations ascribe these zones to the presence of a compositional gradient in the epilayers. A comparison among investigated samples grown under slightly different growth conditions combined with an analysis of the crystal defects is presented. Growth-induced small variations in the chemical composition of the epilayer can produce differences in the structural quality of the epitaxial layer. Finally, a few monolayers thick and highly strained film of InAsP, is observed in all investigated samples at the substrate/epilayer interface. The formation of this interface layer is explained by the exchange of As and P during exposure of the InP surface to As4 before the growth.
Structural characterisation of lattice matched AlxIn1-xAs/InP and GayIn1-yAs/InP heterostructures by transmission electron microscopy and high-resolution x-ray diffraction
E Carlino;C Giannini;
1995
Abstract
n this work we report on transmission electron microscopy and high-resolution x-ray diffractometry studies of lattice matched A&It+ -,As/I.nP and Ga$n, -,As/InP epilayers grown by molecular beam epitaxy on InP(100) substrates. High-resolution and diffraction contrast electron microscopy measurements show the presence of different contrast zones in the epilayers. The analysis of high-resolution x-ray diffraction measurements and computer simulations ascribe these zones to the presence of a compositional gradient in the epilayers. A comparison among investigated samples grown under slightly different growth conditions combined with an analysis of the crystal defects is presented. Growth-induced small variations in the chemical composition of the epilayer can produce differences in the structural quality of the epitaxial layer. Finally, a few monolayers thick and highly strained film of InAsP, is observed in all investigated samples at the substrate/epilayer interface. The formation of this interface layer is explained by the exchange of As and P during exposure of the InP surface to As4 before the growth.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
