The optimisation of ZnSe/ZnS multi-quantum-wells grown by metal-organic vapour phase epitaxy (MOVPE) for lasers was carried out with the help of structural and electro optical characterisation techniques, Good-quality quantum wells were obtained using a lower growth temperature (315°C) with respect to the ZnS buffer layer (342°C). Although even the best samples contain a high density of microtwins crossing the active layer, the luminescence efficiency is quite good and the threshold for the stimulated emission at 10 K is as low as 170 kW/cm^(2).
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs
M Mazzer;G Leo;G Salviati;P Prete;
1997
Abstract
The optimisation of ZnSe/ZnS multi-quantum-wells grown by metal-organic vapour phase epitaxy (MOVPE) for lasers was carried out with the help of structural and electro optical characterisation techniques, Good-quality quantum wells were obtained using a lower growth temperature (315°C) with respect to the ZnS buffer layer (342°C). Although even the best samples contain a high density of microtwins crossing the active layer, the luminescence efficiency is quite good and the threshold for the stimulated emission at 10 K is as low as 170 kW/cm^(2).File in questo prodotto:
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