The structural and electrical characterisation of CdTe epilayers grown by H2 transport vapour phase epitaxy (H2T-VPE) on ZnTe/(100)GaAs is reported. Double-crystal X-ray diffraction measurements indicate the material high crystalline quality, leading to (400) peak FWHM of 59 arcsec for30 um thick epilayers. CdTe grown at temperatures T-D<650°C are p-type, but turn to n-type for T-D>650°C. For 650°C
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE
P Prete;A Cola;
2000
Abstract
The structural and electrical characterisation of CdTe epilayers grown by H2 transport vapour phase epitaxy (H2T-VPE) on ZnTe/(100)GaAs is reported. Double-crystal X-ray diffraction measurements indicate the material high crystalline quality, leading to (400) peak FWHM of 59 arcsec for30 um thick epilayers. CdTe grown at temperatures T-D<650°C are p-type, but turn to n-type for T-D>650°C. For 650°CFile in questo prodotto:
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