SiO2-GeO2 planar waveguides, doped with Eu3+ ions, have been prepared using the dip-coating technique. Optical characterization of the waveguides has been performed by m-line spectroscopy. The structural modification occurring during the densification process has been followed by waveguide Raman and luminescence spectroscopies. A strong rearrangement in the glass occurs after annealing at 900°C and the final structure appears more ordered.
Preparation of SiO2-GeO2:Eu3+ planar waveguides and characterisation by waveguide Raman and luminescence spectroscopies
Ferrari;
1998
Abstract
SiO2-GeO2 planar waveguides, doped with Eu3+ ions, have been prepared using the dip-coating technique. Optical characterization of the waveguides has been performed by m-line spectroscopy. The structural modification occurring during the densification process has been followed by waveguide Raman and luminescence spectroscopies. A strong rearrangement in the glass occurs after annealing at 900°C and the final structure appears more ordered.File in questo prodotto:
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