We report on the growth and properties of SrRuO3 films for application as metal gates for CMOS devices. The films were grown at 500degreesC by metal-organic chemical vapour deposition on Si substrates with thermal SiO2, atomic-layer deposited Al2O3 and HfO2 dielectric films. The films exhibit room temperature resistivity below 1 mOmegacm. We have analysed the interface between the SrRuO3 metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N-2 + 10% H-2) were employed for testing the stability of the SrRuO3 metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO3 gate electrode are analysed with regards to integration in CMOS devices.
Preparation of SrRuO3 films for advanced CMOS metal gates
Wiemer C;
2004
Abstract
We report on the growth and properties of SrRuO3 films for application as metal gates for CMOS devices. The films were grown at 500degreesC by metal-organic chemical vapour deposition on Si substrates with thermal SiO2, atomic-layer deposited Al2O3 and HfO2 dielectric films. The films exhibit room temperature resistivity below 1 mOmegacm. We have analysed the interface between the SrRuO3 metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N-2 + 10% H-2) were employed for testing the stability of the SrRuO3 metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO3 gate electrode are analysed with regards to integration in CMOS devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
