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EBIC and CL imaging of misfit dislocations in partially relaxed InxGa1-xAs/GaAs p-i-n junctions give contradictory results. The EBIC measurements agree with XRD and TEM observations and show that the dislocations are confined at the interface between the GaAs substrate and the first InGaAs epitaxial layer, that is 2.2mum from the free surface. A completely different scenario is obtained by CL when dark lines are visible both in panchromatic and monochromatic images with a beam energy as low as 3 keV. At this accelerating voltage the electron range is about 100 nm. The differences between the CL and the EBIC results are discussed.

Comparative Cathodoluminescence and EBIC analysis of strain balanced InGaAs based p-i-n devices

M Mazzer;L Nasi;L Lazzarini;G Salviati
2001

Abstract

EBIC and CL imaging of misfit dislocations in partially relaxed InxGa1-xAs/GaAs p-i-n junctions give contradictory results. The EBIC measurements agree with XRD and TEM observations and show that the dislocations are confined at the interface between the GaAs substrate and the first InGaAs epitaxial layer, that is 2.2mum from the free surface. A completely different scenario is obtained by CL when dark lines are visible both in panchromatic and monochromatic images with a beam energy as low as 3 keV. At this accelerating voltage the electron range is about 100 nm. The differences between the CL and the EBIC results are discussed.
2001
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials 2001
567
570
0-7503-0818-4
IOP Publishing Ltd. (Institute of Physics Publishing Ltd)
"Bristol ; London"
REGNO UNITO DI GRAN BRETAGNA
Sì, ma tipo non specificato
25-29 March 2001
Oxford (UK)
EBIC
CL imaging
Conference: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials Location: UNIV OXFORD, OXFORD, ENGLAND Date: MAR 25-29, 2001 Sponsor(s):Royal Microscop Soc; Inst Phys, Electron Microscopy & Anal Grp; Mat Res Soc
WOS:000176465200122
3
none
S Tundo; M Mazzer; L Nasi; L Lazzarini; G Salviati
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/9036
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