Nearly spherical voids, with a size on the order of some tens of nanometers, are defects that have recently attracted a renewed interest, due to their capability to getter impurities and point defects in silicon. High-resolution electron holography is employed here to study the three-dimensional configuration of nearly spherical cavities obtained by 100keV P+ ion bombardment of a silicon wafer using an ion beam with a power density of about 40 W/cm(2) for 4 sec. Reconstructed phase maps have been used to obtain the qualitative topography of the cavity shape as well as quantitative measurements of the depth variations. Faceting of the nearly spherical voids is discussed in detail.
Off-axis electron holography of nearly faceted voids in del-annealed implanted silicon
Lulli G;Merli PG;Migliori A
1999
Abstract
Nearly spherical voids, with a size on the order of some tens of nanometers, are defects that have recently attracted a renewed interest, due to their capability to getter impurities and point defects in silicon. High-resolution electron holography is employed here to study the three-dimensional configuration of nearly spherical cavities obtained by 100keV P+ ion bombardment of a silicon wafer using an ion beam with a power density of about 40 W/cm(2) for 4 sec. Reconstructed phase maps have been used to obtain the qualitative topography of the cavity shape as well as quantitative measurements of the depth variations. Faceting of the nearly spherical voids is discussed in detail.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
