We investigated the effect of the free-electron density on the heavy-hole exciton transitions in n-type, modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells. Exciton binding energy and oscillator strength were determined from optical-absorption spectra and were found to be strongly influenced by the free-carrier concentration. Complete saturation of the excitonic absorption could be induced at sufficiently high doping levels. Comparison with theoretical predictions suggests that phase-space filling and short-range exchange interactions may account for exciton bleaching. The corresponding critical density was found to increase with Cd content as a consequence of the increasing exciton stability.

Free-carrier effects on the excitonic absorption of n-type modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells

P PRETE;
1995

Abstract

We investigated the effect of the free-electron density on the heavy-hole exciton transitions in n-type, modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells. Exciton binding energy and oscillator strength were determined from optical-absorption spectra and were found to be strongly influenced by the free-carrier concentration. Complete saturation of the excitonic absorption could be induced at sufficiently high doping levels. Comparison with theoretical predictions suggests that phase-space filling and short-range exchange interactions may account for exciton bleaching. The corresponding critical density was found to increase with Cd content as a consequence of the increasing exciton stability.
1995
Istituto per la Microelettronica e Microsistemi - IMM
OPTICAL NONLINEARITIES; modulation doped heterostructures;excitonic absorption; II-VI compounds
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/9071
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