Synchrobron-based total-reflection x-ray fluorescence(SR-TXRF) has been developed as a leading technique for measuring wafer cleanliness. It holds advantages over other techniques in that it is non-destructive and allows mapping of the surface. The highest sensitivity observed thus far is 3x10(8) atoms/cm(2) (approximate to 3fg) for 1000 second count time. Several applications of SR-TXRF are presented which take advantage of the energy tunability of the synchrotron source or the mapping capability.

Update on synchrotron radiation TXRF: New results

Wiemer C;
1998

Abstract

Synchrobron-based total-reflection x-ray fluorescence(SR-TXRF) has been developed as a leading technique for measuring wafer cleanliness. It holds advantages over other techniques in that it is non-destructive and allows mapping of the surface. The highest sensitivity observed thus far is 3x10(8) atoms/cm(2) (approximate to 3fg) for 1000 second count time. Several applications of SR-TXRF are presented which take advantage of the energy tunability of the synchrotron source or the mapping capability.
1998
Istituto per la Microelettronica e Microsistemi - IMM
1-55899-430-0
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/9118
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