We investigated exciton stability and the recombination mechanism responsible for lasing in Zn1-xCdxSe/ZnSe multiple quantum well structures grown by molecular beam epitaxy. We used photocurrent measurements as a function of sample composition and temperature to gauge exciton stability, and photoluminescence and magne tophotoluminescence spectroscopy to identify the recombination channels associated with stimulated emission. For relatively shallow quantum wells (x similar to 0.10), the spontaneous emission line shifts diamagnetically with the magnetic field as expected for exciton-related transitions. On the contrary, the stimulated emission exhibits a linear shift with the magnetic field which is consistent with free-carrier recombination from Landau levels.

RECOMBINATION MECHANISMS IN PHOTOPUMPED ZN1-XCDXSE/ZNSE MULTIPLE-QUANTUM-WELL LASERS

M LOMASCOLO;P PRETE;
1995

Abstract

We investigated exciton stability and the recombination mechanism responsible for lasing in Zn1-xCdxSe/ZnSe multiple quantum well structures grown by molecular beam epitaxy. We used photocurrent measurements as a function of sample composition and temperature to gauge exciton stability, and photoluminescence and magne tophotoluminescence spectroscopy to identify the recombination channels associated with stimulated emission. For relatively shallow quantum wells (x similar to 0.10), the spontaneous emission line shifts diamagnetically with the magnetic field as expected for exciton-related transitions. On the contrary, the stimulated emission exhibits a linear shift with the magnetic field which is consistent with free-carrier recombination from Landau levels.
1995
Istituto per la Microelettronica e Microsistemi - IMM
II-VI Multiple quantum wells; EXCITONIC GAIN; HETEROSTRUCTURES; DEVICES; DIODES
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/9124
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