Antiphase Boundaries (APBs) in GaAs grown epitaxially on (100) Ge have been studied both in GaAs solar cells and in as-grown material. Scanning electron microscope EBIC (electron beam induced current) and CL (cathodoluminescence) have been used to image and to record APE contrast linescans. Values of surface recombination velocity and of minority carrier diffusion length derived by applying the Donolato phenomenological analysis to the EBIC contrast are reported. TEM studies of APE structure are also reported.
Structure and properties of APBs in GaAs/Ge
M Mazzer;G Salviati;L Lazzarini;L Nasi
1995
Abstract
Antiphase Boundaries (APBs) in GaAs grown epitaxially on (100) Ge have been studied both in GaAs solar cells and in as-grown material. Scanning electron microscope EBIC (electron beam induced current) and CL (cathodoluminescence) have been used to image and to record APE contrast linescans. Values of surface recombination velocity and of minority carrier diffusion length derived by applying the Donolato phenomenological analysis to the EBIC contrast are reported. TEM studies of APE structure are also reported.File in questo prodotto:
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