Photogeneration of non-equilibrium carriers by short laser pulses and measurements of their dynamics by different contactless techniques were used to characterize II-VI heterostructures. Quite small surface recombination rates were found for ZnTe and CdTe epilayers, whilst bulk recombination in these materials was rather efficient. For CdTe, the carrier lifetime ranges in the 250-300 ps interval, the surface recombination velocity being about 10(4) cm/s.
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques
P Prete;
1999
Abstract
Photogeneration of non-equilibrium carriers by short laser pulses and measurements of their dynamics by different contactless techniques were used to characterize II-VI heterostructures. Quite small surface recombination rates were found for ZnTe and CdTe epilayers, whilst bulk recombination in these materials was rather efficient. For CdTe, the carrier lifetime ranges in the 250-300 ps interval, the surface recombination velocity being about 10(4) cm/s.File in questo prodotto:
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