The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (0 0 1) c(2 × 2), ZnSe (0 0 1) 2 × 1, or ZnSe (0 0 1) 1 × 1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on the first two types of interfaces, the p-type Schottky barrier was 0.24 eV lower for the third type of interface.
Schottky barrier tunability in Al/ZnSe interfaces
M Lazzarino;S Rubini;L Sorba;A Franciosi
1998
Abstract
The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (0 0 1) c(2 × 2), ZnSe (0 0 1) 2 × 1, or ZnSe (0 0 1) 1 × 1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on the first two types of interfaces, the p-type Schottky barrier was 0.24 eV lower for the third type of interface.File in questo prodotto:
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