In1-xGaxAs buffer layers grown on GaAs(0 0 1) wafers can be used as novel substrates lattice matched to the Zn1-yCdySe active layers employed in blue-green lasers. Photoluminescence studies of Zn1-yCdySe alloys (x = 0.15 and 0.25) grown by molecular beam epitaxy on such substrates show a dramatic reduction in the deep-level emission as compared to Zn1-yCdySe/GaAs(0 0 1) heterostructures. The surface of the epilayers, however, exhibits a cross-hatched morphology as a result of ~ 10 nm deep surface corrugations oriented along perpendicular ?1 1 0? directions.
Lattice-matched Zn1-yCdySe/InxGa1-xAs(0 0 1) heterostructures
L Sorba;S Rubini;M Lazzarino;S Heun;E Napolitani;
1998
Abstract
In1-xGaxAs buffer layers grown on GaAs(0 0 1) wafers can be used as novel substrates lattice matched to the Zn1-yCdySe active layers employed in blue-green lasers. Photoluminescence studies of Zn1-yCdySe alloys (x = 0.15 and 0.25) grown by molecular beam epitaxy on such substrates show a dramatic reduction in the deep-level emission as compared to Zn1-yCdySe/GaAs(0 0 1) heterostructures. The surface of the epilayers, however, exhibits a cross-hatched morphology as a result of ~ 10 nm deep surface corrugations oriented along perpendicular ?1 1 0? directions.File in questo prodotto:
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