Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (?Ec) is found to be 0.10-0.12 eV.
Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions
S Rubini;L Sorba;A Franciosi
1998
Abstract
Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (?Ec) is found to be 0.10-0.12 eV.File in questo prodotto:
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