Al/ZnSe(100) Schottky barriers fabricated on c(2×2), 2×1, and 1×1 reconstructed surfaces were studied by means of photoemission spectroscopy and first-principles calculations. Relatively similar values of the Schottky barriers were found for interfaces fabricated on Zn-stabilized c(2×2) and Se-dimerized 2×1surfaces, while substantially lower values of the p-type barriers were predicted theoretically and observed experimentally for junctions grown on the Se-rich 1×1 surface.
Al/ZnSe(100) Schottky-barrier height versus initial ZnSe surface reconstruction
M Lazzarino;S Rubini;L Sorba;
1998
Abstract
Al/ZnSe(100) Schottky barriers fabricated on c(2×2), 2×1, and 1×1 reconstructed surfaces were studied by means of photoemission spectroscopy and first-principles calculations. Relatively similar values of the Schottky barriers were found for interfaces fabricated on Zn-stabilized c(2×2) and Se-dimerized 2×1surfaces, while substantially lower values of the p-type barriers were predicted theoretically and observed experimentally for junctions grown on the Se-rich 1×1 surface.File in questo prodotto:
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