A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N2+ ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.
DUAL-ION-BEAM SPUTTER DEPOSITION OF TiN FILMS
QUARANTA F;
1991
Abstract
A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N2+ ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.File in questo prodotto:
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