The quantum-confined Stark effect (QCSE) in Zn1-xCdxSe/ZnSe multiple quantum wells embedded in the intrinsic region of p-i-n photodiodes has been investigated by means of photoluminescence spectroscopy under applied bias and photocurrent spectroscopy. Room-temperature excitonic bleaching is observed at reverse biases as low as 3 V. Both the redshift and the reduction of the oscillator strength of the excitonic emission have bean calculated by means of a variational model. We use the same model to clarify the main specific features of the QCSE in II-VI materials

Electro-optic exciton nonlinearities in Zn1-xCdxSe/ZnSe multiple quantum wells

Rinaldi R;Quaranta F;Sorba L;
1996

Abstract

The quantum-confined Stark effect (QCSE) in Zn1-xCdxSe/ZnSe multiple quantum wells embedded in the intrinsic region of p-i-n photodiodes has been investigated by means of photoluminescence spectroscopy under applied bias and photocurrent spectroscopy. Room-temperature excitonic bleaching is observed at reverse biases as low as 3 V. Both the redshift and the reduction of the oscillator strength of the excitonic emission have bean calculated by means of a variational model. We use the same model to clarify the main specific features of the QCSE in II-VI materials
1996
STARK-EFFECT MODULATORS
PHOTOCURRENT SPECTROSCOPY
ELECTROABSORPTION
ABSORPTION
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/9525
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