Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.
"Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method"
A Chiasera;M Ferrari
2012
Abstract
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.File in questo prodotto:
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