statistiche ricercatore

Continente	#
AS - Asia	325
NA - Nord America	282
EU - Europa	104
SA - Sud America	73
Continente sconosciuto - Info sul continente non disponibili	30
AF - Africa	11
OC - Oceania	1
Totale	826

Nazione	#
US - Stati Uniti d'America	267
SG - Singapore	139
CN - Cina	67
BR - Brasile	54
VN - Vietnam	40
IT - Italia	37
HK - Hong Kong	35
FR - Francia	13
NL - Olanda	12
AR - Argentina	9
BD - Bangladesh	8
CA - Canada	7
EC - Ecuador	7
FI - Finlandia	7
JP - Giappone	7
KR - Corea	7
RU - Federazione Russa	7
MX - Messico	5
GB - Regno Unito	4
UA - Ucraina	4
ZA - Sudafrica	4
DE - Germania	3
ID - Indonesia	3
IN - India	3
SA - Arabia Saudita	3
AE - Emirati Arabi Uniti	2
CR - Costa Rica	2
DK - Danimarca	2
GR - Grecia	2
IE - Irlanda	2
IL - Israele	2
JO - Giordania	2
MA - Marocco	2
PL - Polonia	2
SE - Svezia	2
AM - Armenia	1
AU - Australia	1
BG - Bulgaria	1
CH - Svizzera	1
CM - Camerun	1
CO - Colombia	1
CY - Cipro	1
CZ - Repubblica Ceca	1
EG - Egitto	1
KE - Kenya	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LV - Lettonia	1
MT - Malta	1
MY - Malesia	1
NO - Norvegia	1
PE - Perù	1
PK - Pakistan	1
PT - Portogallo	1
SC - Seychelles	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
VE - Venezuela	1
Totale	796

Nome	#
Uncertainties in the adaptation of alpine pastures to climate change based on remote sensing products and modelling	87
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers	69
Exploring UV-Laser Effects on Al-Implanted 4H-SiC	59
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)	53
New strategies to improve the luminescence efficiency of Eu ions embedded in Si-based matrices	52
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures	50
Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing	49
Synthesis and characterization of light emitting Eu2O3 films on Si substrates	48
Barrier height tuning in Ti/4H-SiC Schottky diodes	47
Structural and luminescence properties of undoped and Eu-doped SiOC thin films	46
Microscopic investigations of advanced thin films for photonics	46
Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates	44
SiOC thin films: an efficient light source and an ideal host matrix for Eu2+ ions	44
New strategies to improve Eu light emission in Si-based matrices	42
Multicolor Depth-Resolved Cathodoluminescence from Eu-Doped SiOC Thin Films	38
White light emission from Eu-doped SiOC films	35
Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC	17
Totale	826

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2023/2024	6	0	0	0	0	0	0	0	0	0	0	0	6
2024/2025	285	1	0	12	5	38	16	32	38	16	11	62	54
2025/2026	437	23	23	43	54	99	24	63	23	19	45	14	7
2026/2027	98	41	21	36	0	0	0	0	0	0	0	0	0
Totale													826

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