Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC

In this paper, we investigated the effects of the processing parameters, such as deposition methods, annealing temperature, and metal thickness, on the electrical characteristics of Ti/4H-SiC contacts. A reduction of the Schottky barrier height from 1.19 to 1.00 eV following an increase of the annealing temperature (475–700 ◦C) was observed for a reference contact with an 80 nm-thick Ti layer. The current transport mechanisms can be described according to the thermionic emission (TE) and thermionic field emission (TFE) models under forward and reverse biases, respectively. The comparison with an e-beam evaporated Ti(80 nm)/4H-SiC contact did not show significant differences for the forward characteristics, while an increase of the leakage current was observed under high reverse voltage (>500 V). Finally, a thickness variation from 10 to 80 nm induced a reduction of the Schottky barrier height, due to the reaction occurring at the interface with a Ti-Al region extended up to the 4H-SiC surface. In addition to a deeper understanding of the Schottky barrier properties, this work is useful for the development of Schottky barrier diodes with tailored characteristics.