In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.
Barrier height tuning in Ti/4H-SiC Schottky diodes
Bellocchi, G.
;Vivona, M.Secondo
;Bongiorno, C.;Roccaforte, F.
2021
Abstract
In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.File in questo prodotto:
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