SAPIENZA, SERGIO
SAPIENZA, SERGIO
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN - Sede Secondaria Bologna
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams
2025 Garofalo, A.; Muoio, A.; Sapienza, S.; Ferri, M.; Belsito, L.; Roncaglia, A.; La Via, F.
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters
2025 Muoio, A.; Garofalo, A.; Sapienza, S.; La Via, F.
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
2024 Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
2024 Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto
Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon
2021 Sapienza, S.; Ferri, M.; Belsito, L.; Marini, D.; Zielinski, M.; La Via, F.; Roncaglia, A.
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
2021 Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni
Correlation between {OCVD} carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of {SiC} power {MOSFETs}
2020 Sapienza, S.; Sozzi, G.; Santoro, D.; Cova, P.; Delmonte, N.; Verrini, G.; Chiorboli, G.
Smart soiling sensor for PV modules
2020 Simonazzi, M.; Chiorboli, G.; Cova, P.; Menozzi, R.; Santoro, D.; Sapienza, S.; Sciancalepore, C.; Sozzi, G.; Delmonte, N.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams | 1-gen-2025 | Garofalo, A.; Muoio, A.; Sapienza, S.; Ferri, M.; Belsito, L.; Roncaglia, A.; La Via, F. | |
| Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters | 1-gen-2025 | Muoio, A.; Garofalo, A.; Sapienza, S.; La Via, F. | |
| Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law | 1-gen-2024 | Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta | |
| Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 | 1-gen-2024 | Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto | |
| Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon | 1-gen-2021 | Sapienza, S.; Ferri, M.; Belsito, L.; Marini, D.; Zielinski, M.; La Via, F.; Roncaglia, A. | |
| OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup | 1-gen-2021 | Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni | |
| Correlation between {OCVD} carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of {SiC} power {MOSFETs} | 1-gen-2020 | Sapienza, S.; Sozzi, G.; Santoro, D.; Cova, P.; Delmonte, N.; Verrini, G.; Chiorboli, G. | |
| Smart soiling sensor for PV modules | 1-gen-2020 | Simonazzi, M.; Chiorboli, G.; Cova, P.; Menozzi, R.; Santoro, D.; Sapienza, S.; Sciancalepore, C.; Sozzi, G.; Delmonte, N. |