In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on the vacuum-packaged devices, showing Q-factor values up to 290,000, a process yield above 80%, and a maximum vacuum level around 10−2 mbar inside the Ti-gettered encapsulations.
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
Sergio Sapienza;Luca Belsito;Matteo Ferri;Ivan Elmi;Francesco La Via;Alberto Roncaglia
2024
Abstract
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on the vacuum-packaged devices, showing Q-factor values up to 290,000, a process yield above 80%, and a maximum vacuum level around 10−2 mbar inside the Ti-gettered encapsulations.File in questo prodotto:
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