SAPIENZA, SERGIO
SAPIENZA, SERGIO
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
2024 Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon
2024 Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; La Via, Francesco; Roncaglia, Alberto
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
2024 Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto
Stress Fields Distribution and Simulation in 3C-SiC Resonators
2024 Scuderi, Viviana; Muoio, Annamaria; Sapienza, Sergio; Ferri, Matteo; Belsito, Luca; Roncaglia, Alberto; La Via, Francesco
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
2023 Sapienza, Sergio; Ferri, Matteo; Belsito, Luca; Marini, Diego; Zielinski, Marcin; La Via, Francesco; Roncaglia, Alberto
Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator
2022 La Via, Francesco; Belsito, Luca; Ferri, Matteo; Sapienza, Sergio; Roncaglia, Alberto; Zielinski, Marcin; Scuderi, Viviana
Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon
2021 Sapienza, S.; Ferri, M.; Belsito, L.; Marini, D.; Zielinski, M.; La Via, F.; Roncaglia, A.
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
2021 Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni
Correlation between {OCVD} carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of {SiC} power {MOSFETs}
2020 Sapienza, S.; Sozzi, G.; Santoro, D.; Cova, P.; Delmonte, N.; Verrini, G.; Chiorboli, G.
Smart soiling sensor for PV modules
2020 Simonazzi, M.; Chiorboli, G.; Cova, P.; Menozzi, R.; Santoro, D.; Sapienza, S.; Sciancalepore, C.; Sozzi, G.; Delmonte, N.
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC.
2019 Nipoti, Roberta; Canino, Mariaconcetta; Sapienza, Sergio; Bellettato, Michele; Sozzi, Giovanna; Alfieri, Giovanni
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law | 1-gen-2024 | Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta | |
| Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon | 1-gen-2024 | Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; La Via, Francesco; Roncaglia, Alberto | |
| Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 | 1-gen-2024 | Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto | |
| Stress Fields Distribution and Simulation in 3C-SiC Resonators | 1-gen-2024 | Scuderi, Viviana; Muoio, Annamaria; Sapienza, Sergio; Ferri, Matteo; Belsito, Luca; Roncaglia, Alberto; La Via, Francesco | |
| Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators | 1-gen-2023 | Sapienza, Sergio; Ferri, Matteo; Belsito, Luca; Marini, Diego; Zielinski, Marcin; La Via, Francesco; Roncaglia, Alberto | |
| Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator | 1-gen-2022 | La Via, Francesco; Belsito, Luca; Ferri, Matteo; Sapienza, Sergio; Roncaglia, Alberto; Zielinski, Marcin; Scuderi, Viviana | |
| Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon | 1-gen-2021 | Sapienza, S.; Ferri, M.; Belsito, L.; Marini, D.; Zielinski, M.; La Via, F.; Roncaglia, A. | |
| OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup | 1-gen-2021 | Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni | |
| Correlation between {OCVD} carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of {SiC} power {MOSFETs} | 1-gen-2020 | Sapienza, S.; Sozzi, G.; Santoro, D.; Cova, P.; Delmonte, N.; Verrini, G.; Chiorboli, G. | |
| Smart soiling sensor for PV modules | 1-gen-2020 | Simonazzi, M.; Chiorboli, G.; Cova, P.; Menozzi, R.; Santoro, D.; Sapienza, S.; Sciancalepore, C.; Sozzi, G.; Delmonte, N. | |
| Activation energy for the post implantation annealing of 10<sup>19</sup>cm<sup>-3</sup> and 10<sup>20</sup> cm<sup>-3</sup> ion implanted al in 4H SiC. | 1-gen-2019 | Nipoti, Roberta; Canino, Mariaconcetta; Sapienza, Sergio; Bellettato, Michele; Sozzi, Giovanna; Alfieri, Giovanni |