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PANASCI, SALVATORE ETHAN

PANASCI, SALVATORE ETHAN  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 24 (tempo di esecuzione: 0.051 secondi).
Titolo Data di pubblicazione Autore(i) File
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 1-gen-2024 Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F.
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 1-gen-2024 Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 1-gen-2024 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Koos, A.; Pecz, B.
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 1-gen-2024 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F.
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 1-gen-2024 Roccaforte, Fabrizio; Vivona, Marilena; Panasci, Salvatore Ethan; Greco, Giuseppe; Fiorenza, Patrick; Sulyok, Attila; Koos, Antal; Pecz, Bela; Giannazzo, Filippo
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 1-gen-2024 Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F.
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 1-gen-2024 Panasci, Salvatore Ethan; Schiliro, Emanuela; Cannas, Marco; Agnello, Simonpietro; Koos, Antal; Nemeth, Miklos; Pécz, Béla; Roccaforte, Fabrizio; Giannazzo, Filippo
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 1-gen-2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Greco, Giuseppe; Roccaforte, F.; Sfuncia, G.; Nicotra, G.; Cannas, M.; Agnello, S.; Frayssinet, E.; Cordier, Y.; Michon, A.; Koos, A.; Pécz, B.
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 1-gen-2023 Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 1-gen-2023 Vivona, M.; Giannazzo, F.; Bellocchi, G.; Panasci, S. E.; Agnello, S.; Badalà, P.; Bassi, A.; Bongiorno, C.; Di Franco, S.; Rascunà, S.; Roccaforte, F.
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 1-gen-2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S.
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 1-gen-2023 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F.
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 1-gen-2023 Spankova, M.; Chromik, S.; Dobrocka, E.; Pribusova Slusna, L.; Talacko, M.; Gregor, M.; Pecz, B.; Koos, A.; Greco, G.; Panasci, S. E.; Fiorenza, P.; Roccaforte, F.; Cordier, Y.; Frayssinet, E.; Giannazzo, F.
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 1-gen-2023 Panasci, S. E.; Schiliro', E.; Koos, A.; Nemeth, M.; Cannas, M.; Agnello, S.; Roccaforte, F.; Pécz, B.; Giannazzo, F.
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 1-gen-2023 Esposito, F; Bosi, M; Attolini, G; Rossi, F; Panasci, SALVATORE ETHAN; Fiorenza, P; Giannazzo, F; Fabbri, F; Seravalli, L
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 1-gen-2022 Vivona, M.; Giannazzo, F.; Bellocchi, G.; Panasci, S. E.; Agnello, S.; Badala, P.; Bassi, A.; Bongiorno, C.; Di Franco, S.; Rascuna, S.; Roccaforte, F.
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 1-gen-2022 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 1-gen-2022 Panasci, S. E.; Koos, A.; Schiliro', E.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Sulyok, A.; Nemeth, M.; Pecz, B.; Giannazzo, F.
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 1-gen-2021 Schiliro', E.; Lo Nigro, R.; Panasci, S. E.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Roccaforte, F.; Giannazzo, F.
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 1-gen-2021 Seravalli, L; Bosi, M; Fiorenza, P; Panasci, Se; Orsi, D; Rotunno, E; Cristofolini, L; Rossi, F; Giannazzo, F; Fabbri, F