Monolayer molybdenum disulfide is considered an extremely promising two-dimensional material for innovative electronics due to its direct bandgap and high charge-carrier mobility. The optical and electronic properties of monolayer MoS2 can, however, be strongly influenced by the specific synthesis route, posing challenges for industrial-scale production. In this study, we investigated the effects of moderate temperature thermal treatments under a controlled O2 atmosphere on the properties of monolayer MoS2 flakes. We found that the treatments can effectively tune the doping level of monolayer MoS2. Notably, 225 °C was identified as the optimal temperature for enhancing its optical emission properties. Our findings suggest that the removal of sulfur vacancies and impurities underlies these effects, demonstrating a promising approach for tuning the properties of monolayer MoS2 at mild temperatures.

Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2

Madonia, Antonino
;
Panasci, Salvatore Ethan;Schiliro, Emanuela;Giannazzo, Filippo;Pis, Igor;Bondino, Federica;
2025

Abstract

Monolayer molybdenum disulfide is considered an extremely promising two-dimensional material for innovative electronics due to its direct bandgap and high charge-carrier mobility. The optical and electronic properties of monolayer MoS2 can, however, be strongly influenced by the specific synthesis route, posing challenges for industrial-scale production. In this study, we investigated the effects of moderate temperature thermal treatments under a controlled O2 atmosphere on the properties of monolayer MoS2 flakes. We found that the treatments can effectively tune the doping level of monolayer MoS2. Notably, 225 °C was identified as the optimal temperature for enhancing its optical emission properties. Our findings suggest that the removal of sulfur vacancies and impurities underlies these effects, demonstrating a promising approach for tuning the properties of monolayer MoS2 at mild temperatures.
2025
Istituto Officina dei Materiali - IOM -
Istituto per la Microelettronica e Microsistemi - IMM
MoS2
gold-assisted exfoliation
2D materials
Raman spectroscopy
photoluminescence
thermal processing
defects
strain
doping
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/533371
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