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RIMINI, EMANUELE

RIMINI, EMANUELE  

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Titolo Data di pubblicazione Autore(i) File
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI 1-gen-1993 GALVAGNO G; SCANDURRA A; RAINERI V; SPINELLA C; TORRISI A; LAFERLA A; SCIASCIA V; RIMINI E
AMORPHOUS TO SINGLE-CRYSTAL TRANSITION IN SI INDUCED BY ION-BEAM IRRADIATION 1-gen-1989 Priolo, F; Spinella, C; Rimini, E
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 1-gen-2004 Privitera, S.; Rimini, E.; Zonca, R.
AN ENERGY DISPERSION SPECTROSCOPY TECHNIQUE TO MEASURE TITANIUM SILICIDE LATERAL DIFFUSION 1-gen-1989 Lavia, F; Spinella, C; Rimini, E; Lamantia, A; Ferla, G
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 1-gen-2018 Privitera S.M.S.; Sousa V.; Bongiorno C.; Navarro G.; Sabbione C.; Carria E.; Rimini E.
Atomic disordering processes in crystalline GeTe induced by ion irradiation 1-gen-2018 Privitera, Sms; Mio, Am; Duck, M; Persch, C; Zimbone, M; Wuttig, M; Rimini, E
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 1-gen-2017 Mio A.M.; Privitera S.M.S.; Bragaglia V.; Arciprete F.; Bongiorno C.; Calarco R.; Rimini E.
Coalescence of silver clusters by immersion in diluted HF solution 1-gen-2015 Milazzo, Rg; Mio, Am; D'Arrigo, G; Grimaldi, Mg; Spinella, C; Rimini, E
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 1-gen-1990 PRIOLO F; RIMINI E; SPINELLA C; FERLA G
CRYSTAL AMORPHOUS-SILICON INTERFACE KINETICS UNDER ION-BEAM IRRADIATION 1-gen-1989 Priolo, F; Laferla, A; Spinella, C; Rimini, E; Campisano, Su; Ferla, G
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 1-gen-2017 D'Arrigo, G.; Mio, A. M.; Boniardi, M.; Redaelli, A.; Varesi, E.; Privitera, S.; Pellegrino, G.; Spinella, C.; Rimini, E.
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON 1-gen-1993 Rimini, E; Priolo, F; Spinella, C
Disordering process of GeSb2Te4 induced by ion irradiation 1-gen-2020 Mio A.M.; Privitera S.M.S.; Zimbone M.; Bragaglia V.; Jacobs S.; Persch C.; Arciprete F.; Calarco R.; Wuttig M.; Rimini E.
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 1-gen-2007 Privitera, S.; Rimini, E.; Bongiorno, C.; Pirovano, A.; Bez, R.
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 1-gen-2002 Alberti, A; La Via, F; Rimini, E
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 1-gen-2014 Mio, Am; Ceppatelli, M; Privitera, Sms; D'Arrigo, G; Miritello, M; Gorelli, F; Santoro, M; Bini, R; Rimini, E
ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING 1-gen-1993 Cacciato, A; Benyaich, F; Spinella, C; Rimini, E; Romano, P; Ward, P
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 1-gen-2014 Privitera, Stefania; D'Arrigo, Giuseppe; Mio, Antonio M.; Piluso, Nicolo; La Via, Francesco; Rimini, Emanuele
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy 1-gen-2014 Milazzo, Rg; Mio, Am; D'Arrigo, G; Spinella, C; Grimaldi, Mg; Rimini, E
Electroless deposition of silver investigated with rutherford backscattering and electron microscopy 1-gen-2014 Milazzo R.G.; D'Arrigo G.; Mio A.M.; Spinella C.; Grimaldi M.G.; Rimini E.